| PART |
Description |
Maker |
| H30D60C H30D05C H30D10C H30D15C H30D20C H30D30C H3 |
30A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
|
WTE[Won-Top Electronics]
|
| U30D60C U30D05C U30D10C U30D15C U30D20C U30D30C U3 |
30A GLASS PASSIVATED DUAL SUPEFAST RECTIFIER
|
WTE[Won-Top Electronics]
|
| MTP30 |
Glass Passivated Three-Phase Bridge Rectifier, 30A
|
Nell Semiconductor Co., Ltd
|
| SF3006PT SF3004PT SF3001PT SF3002PT SF3003PT SF300 |
30A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| S1MB-13-F S1AB-13-F S1KB-13-F |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
RECTIFIER STANDARD SINGLE 1A 800V 800 30A-ifsm 5uA-ir 1.1V-vf SMB 3K/REEL 1 A, 800 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| SB300-05H |
50V/ 30A Rectifier
50V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs
From old datasheet system
30A 60V 0.065 Ohm P-Channel Power MOSFETs
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
|
http://
WTE[Won-Top Electronics]
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 2N6250 2N6249 2N6251 |
375V, 30A, 175W silicon N-P-N switcing transistor.
300V, 30A, 175W silicon N-P-N switcing transistor.
450V, 30A, 175W silicon N-P-N switcing transistor.
|
General Electric Solid State
|
| IRFP250N IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| RURG3020 FN3277 |
30A/ 200V Ultrafast Diode
30A, 200V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
